Materials Characterization With Multiple Offset Reflects at Frequencies to 110 GHz

Published

January 8, 2020

Author(s)

Nina P. Basta, Aaron Hagerstrom, Jasper A. Drisko, James Booth, Edward Garboczi, Christian Long, Nathan Orloff

Abstract

Understanding the electrical properties of materials is a necessary part of any microwave circuit design. In this article, we explore the possibility of employing multiple-offset-reflect devices for on-wafer materials characterization at frequencies up to 110 GHz. The objective of this new technique is to provide a one-port characterization technique that does not require a first-tier calibration. To verify our results, we performed companion analyses with multiline thru-reflect-line, extracting the permittivity of fused silica and SU-8, which is a common photocurable polymer. For fused silica, we obtained a relative permittivity of 3.80 ± 0.02 from 5 to 110 GHz. For SU-8, we obtained a relative permittivity of 3.25 ± 0.02 at 28 GHz, which agreed with the literature values.

Citation

IEEE Transactions on Microwave Theory and Techniques

Volume

68

Issue

1

Pub Type

Journals

Download Paper

https://doi.org/10.1109/TMTT.2019.2950023

Local Download

Keywords

110 GHz, multiple offset, nondestructive', permittivity, short/reflect (one or two-port) calibration.

Citation

Basta, N. , Hagerstrom, A. , Drisko, J. , Booth, J. , Garboczi, E. , Long, C. and Orloff, N. (2020), Materials Characterization With Multiple Offset Reflects at Frequencies to 110 GHz, IEEE Transactions on Microwave Theory and Techniques, [online], https://doi.org/10.1109/TMTT.2019.2950023, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=931224 (Accessed October 20, 2025)