NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.
Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.
An official website of the United States government
Here’s how you know
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Non-volatile Multi-level Switching in Artificial Synaptic Transistors Based on Epitaxial LiCoO2 Thin Films
Published
Author(s)
Heshan Yu, Megan E. Holtz, Yunhui Gong, Justin Pearson, Yaoyu Ren, Andrew Herzing, Xiaohang Zhang, Ichiro Takeuchi
Abstract
Li-ion synaptic transistors offer non-volatile multi-level switching through Li-ion exchange between channel and electrolyte, and thus are widely regarded as promising candidates for the neuromorphic computing. However, a relatively low switching speed in devices fabricated on polycrystalline films still greatly limits the application scope of these devices. To optimize the device performance, improving the crystallinity of the channels is a direction being actively pursued. In this study, we systematically investigate of the multi-switching operation in the Li-ion synaptic devices fabricated on epitaxial Li1-xCoO2 (LCO) thin films with different orientations. Programming these devices with a series of presynaptic pulses, non- volatile potentiation and depression states are established and confirmed to be stable for a period at least three times of the pulse duration. By reducing the thickness of the LCO channel, the signal-to-noise ratio of the non-volatile switching can be substantially improved. Changes in the potentiation and depression states are found to significantly depend on the lattice orientation of the LCO channel, suggesting that an anisotropic Li-ion diffusion rate in highly-crystallized LCO films plays an important role in the device performance.
Yu, H.
, Holtz, M.
, Gong, Y.
, Pearson, J.
, Ren, Y.
, Herzing, A.
, Zhang, X.
and Takeuchi, I.
(2021),
Non-volatile Multi-level Switching in Artificial Synaptic Transistors Based on Epitaxial LiCoO2 Thin Films, Physical Review Materials, [online], https://doi.org/10.1103/PhysRevMaterials.5.115401, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=931738
(Accessed October 20, 2025)