International Round-Robin Study on Thermoelectric Transport Properties of n-type Half-Heusler from 300 K to 773 K

Published

September 3, 2015

Author(s)

Hsin Wang, Shengqiang Bai, Lidong Chen, Alexander Cuenat, Giri Joshi, Holger Kleinke, Jan K?nig, Hee Woong Lee, Joshua Martin, Min-Wook Oh, Wallace Porter, Zhifeng Ren, James Salvador, Jeff Sharp, Patrick Taylor, Alan J. Thompson, Y. C. Tseng

Abstract

International transport property measurement round-robins have been conducted by the Thermoelectric Annex under the International Energy Agency (IEA) Implementing Agreement on Advanced Materials for Transportation (AMT). The previous round-robins used commercially available bismuth telluride as the testing material, with the goals of understanding measurement issues and developing standard testing procedures. The current round-robin extended the measurement temperature range to 773 K. It was designed to meet the increasing demands for reliable transport data of thermoelectric materials for power generation applications. Eleven laboratories from six IEA-AMT member countries participated in this study. Half-Heusler (n-type) material prepared by GMZ Energy was selected for the round-robin. The measured transport properties showed narrower distribution on uncertainties compared to previous round-robin efforts. The study intentionally included multiple testing methods and instrument types. Over the full temperature range, the measurement discrepancies on the figure of merit, ZT, in this round-robin were +11.5 to +16.4 % from the averages.

Citation

Journal of Electronic Materials

Pub Type

Journals

Download Paper

https://doi.org/10.1007/s11664-015-4006-z

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Keywords

thermoelectric, round-robin, energy

Citation

Wang, H. , Bai, S. , Chen, L. , Cuenat, A. , Joshi, G. , Kleinke, H. , K?nig, J. , Lee, H. , Martin, J. , Oh, M. , Porter, W. , Ren, Z. , Salvador, J. , Sharp, J. , Taylor, P. , Thompson, A. and Tseng, Y. (2015), International Round-Robin Study on Thermoelectric Transport Properties of n-type Half-Heusler from 300 K to 773 K, Journal of Electronic Materials, [online], https://doi.org/10.1007/s11664-015-4006-z, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=918248 (Accessed October 9, 2025)