A 110 GHz Comb Generator in a 250 nm InP HBT Technology

Published

April 18, 2022

Author(s)

Jerome Cheron, Dylan Williams, Richard Chamberlin, Miguel Urteaga, Paul D. Hale, Rob Jones, Ari Feldman

Abstract

We report a monolithic microwave integrated-circuit (MMIC) comb generator capable of producing a repetitive narrow pulse (7.1 ps pulse duration) with sharp edges (4.2 ps falling time). The circuit is designed in a 250 nm Indium Phosphide (InP) Heterojunction Bipolar Transistor (HBT) technology, using differential pairs in a common-emitter configuration. We characterized the output signal with a 110 GHz sampling oscilloscope and de-embed the band-limited frequency spectrum of the pulse in the circuit reference plane. We measured a pulse width of 7.1 ps and a peak amplitude of -0.333 V. In the frequency domain, the comb generator provides -48.7 dBm of output power at 110 GHz when the circuit is fed with a 1 GHz input signal.

Citation

IEEE Microwave and Wireless Components Letters

Volume

32

Issue

6

Pub Type

Journals

Download Paper

https://doi.org/10.1109/LMWC.2022.3164511

Local Download

Keywords

Monolithic microwave integrated-circuit (MMIC), comb generator, on-wafer calibration, millimeter-wave.

Citation

Cheron, J. , Williams, D. , Chamberlin, R. , Urteaga, M. , Hale, P. , Jones, R. and Feldman, A. (2022), A 110 GHz Comb Generator in a 250 nm InP HBT Technology, IEEE Microwave and Wireless Components Letters, [online], https://doi.org/10.1109/LMWC.2022.3164511, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=933954 (Accessed October 9, 2025)