Ruddlesden–Popper-Phase Hybrid Halide Perovskite/Small-Molecule Organic Blend Memory Transistors

Published

December 31, 2020

Author(s)

Murali Gedda, Emre Yengel, Hendrik Faber, Fabian Paulus, Joshua Kreb, Ming Chun Tang, Siyuan Zhang, Christina A. Hacker, Prashant Kumar, Dipti R. Naphade, Yana Vaynzof, George Volonakis, Feliciano Giustino, Thomas D. Anthopoulos

Abstract

Controlling the morphology of metal halide perovskite layers during processing is critical for the reliable manufacturing of optoelectronic devices. Here we report on a strategy to control the microstructure of solution-processed layered Ruddlesden-Popper phase perovskite films based on (PEA)2PbBr4. The method relies on the addition of the organic semiconductor C8-BTBT directly into the perovskite formulation, where it facilitates the formation of large and near-single- crystalline quality platelet-like (PEA)2PbBr4 domains overlaid by a 4-nm-thin C8-BTBT layer. Transistors based on (PEA)2PbBr4/C8-BTBT channels exhibit unexpectedly large hysteresis window between forward and return gate bias sweeps. Material and device analysis combined with theoretical calculations suggest that the C8-BTBT-rich phase acts as the hole transporting channel, while the naturally forming formed quantum wells in the hybrid perovskite beneath act as the charge storage element where carriers from the channel can be injected, stored or extracted via tunneling. When tested as a non-volatile memory, the devices exhibit record memory window (>180 V), a high erase/write channel current ratio (104), good data retention, and high endurance (>104 cycles). Our results highlight a new memory device concept for application in large-area electronics while highlighting a simple growth technique that could be exploited for the fabrication of various optoelectronic devices.

Citation

Advanced Materials

Volume

33

Issue

7

Pub Type

Journals

Download Paper

https://doi.org/10.1002/adma.202003137

Local Download

Keywords

2D perovskite, additive engineering, perovskite-organic blends, non-volatile memory, floating-gate transistor

Citation

Gedda, M. , Yengel, E. , Faber, H. , Paulus, F. , Kreb, J. , , M. , Zhang, S. , Hacker, C. , Kumar, P. , Naphade, D. , Vaynzof, Y. , Volonakis, G. , Giustino, F. and Anthopoulos, T. (2020), Ruddlesden–Popper-Phase Hybrid Halide Perovskite/Small-Molecule Organic Blend Memory Transistors, Advanced Materials, [online], https://doi.org/10.1002/adma.202003137, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=930301 (Accessed October 8, 2025)