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Magnetic Field Frustration of the Metal-Insulator Transition in V2O3
Published
Author(s)
J. Trastoy, A. Camjayi, J. del Valle, Y. Kalcheim, J.-P. Crocombette, Dustin A. Gilbert, Julie Borchers, J. E. Villegas, D. Ravelosona, M. J. Rozenberg, Ivan K. Schuller
Abstract
Despite decades of efforts, the origin of metal-insulator transitions (MITs) in strongly-correlated materials remains one of the main longstanding problems in condensed-matter physics. An archetypal example is V2O3, which undergoes simultaneous electronic, structural and magnetic phase transitions. This remarkable feature highlights the many degrees of freedom at play in this material. In this work, acting solely on the magnetic degree of freedom, we reveal an anomalous feature in the electronic transport of V2o3; on cooling, the magnetoresistance (MR) changes from positive to negative values well above the MIT temperature, and shows divergent behaviour at the transition. The effects are attributed to the magnetic field quenching antiferromagnetic fluctuations above the Neel temperature, TN, and preventing long-range antiferromagnetic ordering prevents the opening of the incipient electronic gap. This interpretation is supported by Hubbard model calculations and together fully reproduce the experimental behaviour. Our study sheds new light on this classic problem providing a clear and physical interpretation of the nature of the metal-insulator transition.
Trastoy, J.
, Camjayi, A.
, del Valle, J.
, Kalcheim, Y.
, Crocombette, J.
, Gilbert, D.
, Borchers, J.
, Villegas, J.
, Ravelosona, D.
, Rozenberg, M.
and Schuller, I.
(2020),
Magnetic Field Frustration of the Metal-Insulator Transition in V<sub>2</sub>O<sub>3</sub>, Physical Review B, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=928577
(Accessed October 3, 2025)