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M. N. Luckyanova, J. Mendoza, H. Lu, B. Song, S. Huang, J. Zhou, M. Li., Y. Dong, H. Zhou, J. Garlow, L. Wu, Brian Kirby, Alexander Grutter, Alex A. Puretzky, Y. Zhu, M. S. Dresselhaus, A. Gossard, G. Chen
Abstract
We report localization-like behavior in phonon heat conduction observed both in measurement of the thermal conductivities of GaAs/AlAs superlattice (SL) thin films with interfacial disorder caused by ErAs nanodots randomly distributed at the interfaces, and in atomic Green's function simulations. Near room temperature, the measured thermal conductivities of the samples with ErAs dots first increased and then decreased with an increasing number of periods. The experiments and simulation point to a transition from ballistic to localized heat conduction.
Luckyanova, M.
, Mendoza, J.
, Lu, H.
, Song, B.
, Huang, S.
, Zhou, J.
, Li., M.
, Dong, Y.
, Zhou, H.
, Garlow, J.
, Wu, L.
, Kirby, B.
, Grutter, A.
, Puretzky, A.
, Zhu, Y.
, Dresselhaus, M.
, Gossard, A.
and Chen, G.
(2018),
Phonon Localization in Heat Conduction, Science Advances, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=919677
(Accessed October 21, 2025)