McCaughan, A.
, Schneider, M.
, Nam, S.
, Toomey, E.
and Berggren, K.
(2018),
A kinetic-inductance-based superconducting memory element with shunting and sub-nanosecond write times, Superconductor Science and Technology, [online], https://doi.org/10.1088/1361-6668/aae50d
(Accessed October 12, 2025)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
A kinetic-inductance-based superconducting memory element with shunting and sub-nanosecond write times
Published
Author(s)
, , , Emily Toomey, Karl Berggren
Abstract
We present a kinetic-inductance-based superconducting memory element that had non-destructive readout, femtojoule read and write energies, had both read and write shunts, and was writeable with pulses at least as short as 400 ps. The element utilizes both a high-kinetic-inductance layer made from tungsten silicide as well as a low-kinetic-inductance layer made from niobium. By using tungsten silicide--which has a long (20 ns) thermal time constant--and measuring bit- error rates from 10 MHz to 1 GHz, we were able to verify that the thin-film elements could be operated at a datarate at least as fast as the material thermal time constant with a bit error ratio less than 10-6. We also analyze the margins of the device, and outline the characteristics by which a more efficient device may be designed.Citation
Superconductor Science and Technology
Volume
32
Pub Type
Journals
Download Paper
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact [email protected].
Created November 27, 2018, Updated July 9, 2019