Electrical Detection of Singlet Fission in Single Crystal Tetracene Transistors

Published

January 4, 2019

Author(s)

Hyuk-Jae Jang, Emily Bittle, Qin Zhang, Adam Biacchi, Curt A. Richter, David J. Gundlach

Abstract

Here, we present the electrical detection of singlet fission in tetracene by using a field- effect transistor (FET). Singlet fission is a photo-induced spin-dependent process yielding two triplet excitons from the absorption of a single photon. , In this study we engineered a more deterministic platform composed of an organic single crystal than conventionally used thin film based systems to elucidate spin-dependent processes under magnetic fields. Despite the unipolar operation and relatively high mobility of single crystalline tetracene FETs, we were able to manipulate spin dependent processes to produce a few percent of magnetoconductance (MC) at room temperature by illuminating the FETs and tuning bias voltages to adjust majority charge carrier density. In considering the crystalline direction and magnetic field interactions in tetracene we show the uniqueMC response observed in rubrene FETs to be the result of the singlet fission process

Citation

ACS Nano

Volume

13

Issue

1

Pub Type

Journals

Download Paper

https://doi.org/10.1021/acsnano.8b07625

Local Download

Keywords

spintronics, organic electronics, nanoelectronics, organic field-effect transistor, exciton, singlet-triplet fission, magnetoresistance

Citation

Jang, H. , Bittle, E. , Zhang, Q. , Biacchi, A. , Richter, C. and Gundlach, D. (2019), Electrical Detection of Singlet Fission in Single Crystal Tetracene Transistors, ACS Nano, [online], https://doi.org/10.1021/acsnano.8b07625, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=924158 (Accessed October 22, 2025)