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A Capacitance Standard Based on Counting Electrons
Published
Author(s)
Mark W. Keller, Ali L. Eichenberger, John M. Martinis, Neil M. Zimmerman
Abstract
A capacitance standard based directly on the definition of capacitance was built. Single-electron tunneling devices were used to place N electrons of charge e onto a cryogenic capacitor C, and the resulting voltage change ΔV was measured. Repeated measurements of C 5 Ne/ΔV with this method have a relative standard deviation of 0.3 x 10^-6. This standard offers a natural basis for capacitance analogous to the Josephson effect for voltage and the quantum Hall effect for resistance.
Keller, M.
, Eichenberger, A.
, Martinis, J.
and Zimmerman, N.
(1999),
A Capacitance Standard Based on Counting Electrons, Science Magazine, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=926555
(Accessed October 26, 2025)