Fujiwara, A.
, Zimmerman, N.
, Ono, Y.
and Takahashi, Y.
(2004),
Current quantization due to single-electron transfer in Si-wire charge-coupled devices, Applied Physics Letters, [online], https://doi.org/10.1063/1.1650036, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=926560
(Accessed October 1, 2025)
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Current quantization due to single-electron transfer in Si-wire charge-coupled devices
Published
Author(s)
Akira Fujiwara, , Yukinori Ono, Yasuo Takahashi
Abstract
We observe a quantized current due to single-electron transfer in a small charge-coupled device, which consists of a narrow Si-wire channel with fine gates; the gate is used to form a tunable barrier potential. By modulating two barrier potentials under the fine gates with phase-shifted pulse voltages, quantized numbers of electrons are injected into and extracted from the charge island sandwiched by the two barriers. Current plateaus due to single-electron transfer are clearly observed at 20 K with frequencies up to 100 MHz and a current level of 16 pA.Citation
Applied Physics Letters
Volume
84
Pub Type
Journals
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Citation
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Created February 22, 2004, Updated October 12, 2021