An electrically driven spin qubit based on valley mixing

Published

February 2, 2017

Author(s)

wister huang, Neil M. Zimmerman, Andrew S. Dzurak, Dimitrie Culcer

Abstract

The electrical control of single spin qubits based on semiconductor quantum dots is of great interest for scalable quantum computing since electric elds are much easier to produce and spatially focus than magnetic elds. Here we outline the mechanism for a drastic enhancement in the electrically- driven spin rotation frequency for silicon quantum dot qubits when in the presence of a step at a hetero-interface. The enhancement is due to the strong coupling between the ground and excited states which occurs when the electron wave-function overcomes the potential barrier induced by the interface step. We theoretically calculate single qubit gate times of 340 ns for a quantum dot con ned at a silicon/silicon-dioxide interface. The engineering of such steps could be used to achieve fast electrical rotation and entanglement of spin qubits despite the weak spin-orbit coupling in silicon.

Citation

Physical Review Letters

Pub Type

Journals

Download Paper

https://doi.org/10.1103/PhysRevB.95.075403

Local Download

Keywords

qubit, silicon, spin

Citation

huang, W. , Zimmerman, N. , Dzurak, A. and Culcer, D. (2017), An electrically driven spin qubit based on valley mixing, Physical Review Letters, [online], https://doi.org/10.1103/PhysRevB.95.075403, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=921123 (Accessed October 14, 2025)