Thorbeck, T.
and Zimmerman, N.
(2015),
Formation of Strain Induced Quantum Dots in Gated Semiconductor Nanostructures, Physical Review Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=913832
(Accessed October 16, 2025)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Formation of Strain Induced Quantum Dots in Gated Semiconductor Nanostructures
Published
Author(s)
,
Abstract
Elastic strain changes the energies of the conduction and valence bands in a semiconductor, which will affect transport through a semiconductor nanostructure. We show that the typical strains in a semiconductor nanostructure arising from metal gates or contacts are large enough to create strain‐induced quantum dots (QDs). We simulate two common silicon QD nanostructures, chemically grown nanowires with metal contacts and metal gates on top of bulk Si, and show strain‐induced QDs. So strain can be as important as electrostatics in QD operation and must be consider when designing a QD device.Citation
Physical Review Letters
Pub Type
Journals
Download Paper
Keywords
Strain-induced quantum dots, quantum dots, silicon quantum dots
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact [email protected].
Created August 4, 2015, Updated October 12, 2021