Vogel, E.
and Misra, V.
(2001),
MOS Device Characterization, ,
(Accessed July 30, 2025)
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MOS Device Characterization
Published
Author(s)
, Veena Misra
Abstract
This chapter provides a survey and discussion of the electrical characterization techniques commonly used to determine the material, performance, and reliability properties of state-of-the-art metal-oxide-semiconductor (MOS) devices used in silicon semiconductor technology. The chapter is not intended as a comprehensive review of all electrical characterization techniques. Instead, the intent is to describe the electrical characterization techniques most common and directly relevant to fabricating and integrating high-performance, state-of-the-art MOS devices.Citation
Handbook of Silicon Semiconductors Metrology
Publisher Info
,
Pub Type
Books
Keywords
capacitance, current, electrical characterization, FET, MOS, reliability, silicon
Citation
Issues
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Created June 30, 2001, Updated October 12, 2021