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Broadband Impedance Parameters of Asymmetric Coupled CMOS Interconnects: New Closed-Form Expressions and Comparison with Measurements
Published
Author(s)
Uwe Arz, Dylan F. Williams, Dave K. Walker, Luoh A, Hartmut Grabinski, Andreas Weisshaary
Abstract
New broadband closed-form expressions for the frequencydependent impedance parameters of asymmetric coupled coplanar interconnects on a conductive silicon substrate are presented. The closed-form expressions are based on a complex image approach that accounts for eddy-current loss in the substrate and incorporates the effect of substrate contacts in the ground lines. The closed-form expressions for asymmetric coupled interconnects fabricated in a CMOS process generally agree well with measurements. To further investigate small differences between the model and measurement results, we also examined the importance of skin- and proximity-effects in the closely spaced conductors.
Proceedings Title
7th IEEE Workshop on Signal Propagation on Interconnects
Arz, U.
, Williams, D.
, Walker, D.
, A, L.
, Grabinski, H.
and Weisshaary, A.
(2003),
Broadband Impedance Parameters of Asymmetric Coupled CMOS Interconnects: New Closed-Form Expressions and Comparison with Measurements, 7th IEEE Workshop on Signal Propagation on Interconnects, Siena, -1, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=920451
(Accessed October 18, 2025)