Researchers from the University of Maryland and the CNST's Shaffique Adam have recently published a detailed review of the electronic transport properties of two-dimensional graphene.* In the Reviews of Modern Physics article, the collaborators compare the electronic transport properties of graphene to other two-dimensional materials such as semiconductor heterostructures, quantum wells, and inversion layers. They detail how, after adjusting for doped graphene's gapless, massless, chiral Dirac spectrum, the mechanisms for its electron motion, including its density and temperature-dependent carrier transport, are similar to these other, more conventional, materials. Graphene, however, has unique transport regimes, including a robust metallic state at vanishing carrier density and unusual quantum motion that appears when it is configured in short ballistic devices. The 64 page article, which has 38 figures and 473 references, provides a comprehensive review of recent experiments and theory, and has been well-received. Although published in May 2011, a preprint of the article posted online in March 2010 has received over 60 citations, making it among the most cited graphene papers of the year.
*Electronic transport in two-dimensional graphene, S. Das Sarma, S. Adam, E. H. Hwang, and E. Rossi, Reviews of Modern Physics 83, 407 (2011).
NIST Publication Database Journal Web Site