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NanoFab Tool: Oxford Plasmalab 100 Plasma Enhanced Chemical Vapor Deposition

Oxford Plasmalab 100 Plasma Enhanced Chemical Vapor Deposition
Credit: NIST

The Oxford PlasmaLab 100 is a plasma-enhanced chemical vapor deposition (PECVD) system used to deposit a variety of thin films on to a substrate material. The system uses RF power supplies to establish a plasma within the chamber which ionizes reactive gases allowing them to recombine and form a film. Due to the energy provided by the plasma, these reactions can occur at much lower temperatures than would be required in thermal CVD processes and thus provides a lower temperature alternative for depositing films such as silicon oxide or silicon nitride.


  • Parallel plate PECVD system with high- and low-frequency RF power supplies.
  • Maximum high-frequency power: 500 W.
  • Maximum low-frequency power: 500 W.
  • Maximum substrate temperature: 400 °C.
  • Film thicknesses ranging from a tens of nanometers to several micrometers.
  • Processes supported:
    • Silicon dioxide.
    • Silicon nitride.
    • Amorphous silicon.
    • TEOS-based silicon oxide.

Usage Information

Supported Sample Sizes

  • Maximum wafer diameter: 200 mm.
  • Small pieces supported: Yes.

Typical Applications

  • Optical waveguides.
  • Silicon gate devices.
  • Solar cell fabrication.
Created March 20, 2024