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Featured Article in APL 2D Transistors Collection

Figure 1 from "Microscopic origin of inhomogeneous transport in four-terminal tellurene devices"

Published in: Benjamin M. Kupp; Gang Qiu; Yixiu Wang; Clayton B. Casper; Thomas M. Wallis; Joanna M. Atkin; Wenzhuo Wu; Peide D. Ye; Pavel Kabos; Samuel Berweger; Appl. Phys. Lett.  117, 253102 (2020)
DOI: 10.1063/5.0025955
Copyright © 2020 U.S. Government

The Quantitative Nanostructure Characterization group's recent paper titled "Microscopic origin of inhomogeneous transport in four-terminal tellurene devices" has been featured in a collection of Applied Physics Letters (APL) on two-dimensional (2D) transistors and was highlighted during promotion of the collection.

Paper: Kupp, B. M., Qiu, G., Wang, Y., Casper, C. B., Wallis, T. M., Atkin, J. M., Berweger, S. (2020). Microscopic origin of Inhomogeneous transport in four-terminal tellurene devices. Applied Physics Letters, 117(25), 253102. doi:10.1063/5.0025955

Created May 13, 2021