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Featured Article in APL 2D Transistors Collection
2D semiconducting materials provide a vast landscape for fundamental research and the development of new technologies. 2D transistors are an important area of research, this Applied Physics Letters collection features papers which shed light into the fields development.
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The Quantitative Nanostructure Characterization group's recent paper titled "Microscopic origin of inhomogeneous transport in four-terminal tellurene devices" has been featured in a collection of Applied Physics Letters (APL) on two-dimensional (2D) transistors and was highlighted during promotion of the collection.
Paper: Kupp, B. M., Qiu, G., Wang, Y., Casper, C. B., Wallis, T. M., Atkin, J. M., Berweger, S. (2020). Microscopic origin of Inhomogeneous transport in four-terminal tellurene devices. Applied Physics Letters, 117(25), 253102. doi:10.1063/5.0025955