NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.
Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.
An official website of the United States government
Here’s how you know
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
X-Ray Absorption Fine-Structure Determination of Ferroelectric Distortion in SrtiO3 Thin Films grown on Si(001)
Published
Author(s)
Joseph Woicik, F S. Aguirre-Tostado, A Herrera-Gomez, R Droopad, Z Yu, D G. Schlom, E Karapetrova, P Zschack, P Pianetta
Abstract
Polarization-dependent x-ray absorption fine structure together with x-ray diffraction have been used to study the local structure in SrTiO3 thin films grown on Si(001). Our data indicate that below a critical thickness of approximately 80 , the in-plane compressive strain imposed on the SrTiO3 layer by the Si substrate results in a tetragonal plus displacive ferroelectric distortion of the SrTiO3 unit cell.
Woicik, J.
, Aguirre-Tostado, F.
, Herrera-Gomez, A.
, Droopad, R.
, Yu, Z.
, Schlom, D.
, Karapetrova, E.
, Zschack, P.
and Pianetta, P.
(2017),
X-Ray Absorption Fine-Structure Determination of Ferroelectric Distortion in SrtiO<sub>3</sub> Thin Films grown on Si(001), Proceedings for the EXAFS XII Conference, Malmo, 1, SW
(Accessed October 14, 2025)