On-Wafer Measurement of Transmission Lines On Lossy Silicon Substrates

Published

September 25, 2000

Author(s)

Uwe Arz, Dylan Williams, Hartmut Grabinski

Abstract

This paper examines broadband measurement techniques for electrical properties of planar transmission lines built on lossy silicon substrates. We start by investigating the performance of a new formulation of the calibration com-parison method which is used to determine the characteristic impedance Z_o of single-mode transmission lines. The prop-agation constant is obtained from a multiline Thru-Reflect-Line (TRL) calibration in the transmission lines under test. The measurement results are compared against quasi-analytical calculations of the frequency-dependent transmission line parameters. We apply these measurement methods to deembed the influence of access lines in test structures for asymmetric coupled lines built on highly conductive silicon substrates. The calibrated four-port scattering parameters of the coupled line segments of these test structures are used to determine the conductance and impedance matrices in power-normalized representation with a nonlinear optimization method. We investigate the modal behavior by calculating the cross power shared between the two fundamental modes from measured and predicted line-parameter values.

Proceedings Title

Proc. 2000 URSI Kleinheubacher Tagung Meeting

Conference Dates

September 25-29, 2000

Conference Location

Kleinheubach, 1, GM

Pub Type

Conferences

Keywords

coupled transmission line, lossy substrate, microstrip, modal power silicon

Citation

Arz, U. , Williams, D. and Grabinski, H. (2000), On-Wafer Measurement of Transmission Lines On Lossy Silicon Substrates, Proc. 2000 URSI Kleinheubacher Tagung Meeting, Kleinheubach, 1, GM (Accessed November 20, 2025)