On-Wafer Measurement of Transmission Lines On Lossy Silicon Substrates
Uwe Arz, Dylan Williams, Hartmut Grabinski
This paper examines broadband measurement techniques for electrical properties of planar transmission lines built on lossy silicon substrates. We start by investigating the performance of a new formulation of the calibration com-parison method which is used to determine the characteristic impedance Zo of single-mode transmission lines. The prop-agation constant is obtained from a multiline Thru-Reflect-Line (TRL) calibration in the transmission lines under test. The measurement results are compared against quasi-analytical calculations of the frequency-dependent transmission line parameters. We apply these measurement methods to deembed the influence of access lines in test structures for asymmetric coupled lines built on highly conductive silicon substrates. The calibrated four-port scattering parameters of the coupled line segments of these test structures are used to determine the conductance and impedance matrices in power-normalized representation with a nonlinear optimization method. We investigate the modal behavior by calculating the cross power shared between the two fundamental modes from measured and predicted line-parameter values.
Proc. 2000 URSI Kleinheubacher Tagung Meeting
September 25-29, 2000
Kleinheubach, 1, GM
coupled transmission line, lossy substrate, microstrip, modal power silicon
, Williams, D.
and Grabinski, H.
On-Wafer Measurement of Transmission Lines On Lossy Silicon Substrates, Proc. 2000 URSI Kleinheubacher Tagung Meeting, Kleinheubach, 1, GM
(Accessed February 20, 2024)