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VAMAS round robin study to evaluate a correction method for saturation effect in DSIMS

Published

Author(s)

David S. Simons, Akio Takano

Abstract

Recently, dynamic secondary ion mass spectrometry (D-SIMS) is being used to analyze ions simultaneously over a wide range of concentrations, from matrix level to extremely low. However, D-SIMS detectors, which are mostly used in pulse counting systems, have problems with detector saturation. Thus, the ion intensities of SIMS must be corrected in their high intensity region. It has been reported that the approximation intermediate dead time model (a-IED model) can be used to correct saturated intensity in the higher region better than can the conventional model. In this study, we evaluated the usefulness of the a-IED model to correct partially saturated and saturated intensities for magnetic sector type D-SIMS and quadrupole-type D-SIMS for the effects of dead time. Analyzed specimens were an arsenic-implanted silicon wafer and a diffused BN onto Si wafer. The instruments used to analyze arsenic-implanted samples were 5 quadrupole-type SIMS and 4 magnetic-sector type SIMS. The instruments used to analyze the BN diffused samples were 3 quadrupole-type SIMS, 4 magnetic-sector type SIMS, and 1 time-of-flight type SIMS. We validated the usefulness of the a-IED model to correct saturated intensities for all SIMS in this round robin test. The optimum extension parameter (rho) tends to be affected by the ratio of the maximum reliable intensity to the maximum intensity.
Citation
Surface and Interface Analysis

Keywords

SIMS, detector, saturation, approximation intermediate extended dead time, VAMAS, round robin test

Citation

Simons, D. and Takano, A. (2014), VAMAS round robin study to evaluate a correction method for saturation effect in DSIMS, Surface and Interface Analysis (Accessed February 28, 2024)
Created May 7, 2014, Updated May 19, 2022