Ultra-short gates improve the performance of high-speed gated single photon avalanche diodes
Alessandro Restelli, Joshua C. Bienfang, Alan L. Migdall
We gate a InGaAs/InP single-photon avalanche diode with a narrow periodic gate obtained by summing a 1.25 GHz sinusoid with its second and third harmonic. The temporal width (FWHM) of the gate is kept below 200 ps by adjusting relative weight of the harmonic components. Measurements of detection efficiency and afterpulse probability as the gate pulse duration is reduced show that it is possible to reach the same detection efficiency obtainable with wider gates with the advantage of significantly reducing afterpulse probability.