NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.
Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.
An official website of the United States government
Here’s how you know
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Ultra-short gates improve the performance of high-speed gated single photon avalanche diodes
Published
Author(s)
Alessandro Restelli, Joshua C. Bienfang, Alan L. Migdall
Abstract
We gate a InGaAs/InP single-photon avalanche diode with a narrow periodic gate obtained by summing a 1.25 GHz sinusoid with its second and third harmonic. The temporal width (FWHM) of the gate is kept below 200 ps by adjusting relative weight of the harmonic components. Measurements of detection efficiency and afterpulse probability as the gate pulse duration is reduced show that it is possible to reach the same detection efficiency obtainable with wider gates with the advantage of significantly reducing afterpulse probability.
Restelli, A.
, Bienfang, J.
and Migdall, A.
(2014),
Ultra-short gates improve the performance of high-speed gated single photon avalanche diodes, Advanced Photon Counting Techniques VIII, Baltimore, MD, [online], https://doi.org/10.1117/12.2050808
(Accessed October 10, 2025)