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Ultra-short gates improve the performance of high-speed gated single photon avalanche diodes

Published

Author(s)

Alessandro Restelli, Joshua C. Bienfang, Alan L. Migdall

Abstract

We gate a InGaAs/InP single-photon avalanche diode with a narrow periodic gate obtained by summing a 1.25 GHz sinusoid with its second and third harmonic. The temporal width (FWHM) of the gate is kept below 200 ps by adjusting relative weight of the harmonic components. Measurements of detection efficiency and afterpulse probability as the gate pulse duration is reduced show that it is possible to reach the same detection efficiency obtainable with wider gates with the advantage of significantly reducing afterpulse probability.
Proceedings Title
Advanced Photon Counting Techniques VIII
Conference Dates
May 5-9, 2014
Conference Location
Baltimore, MD
Conference Title
2014 SPIE DSS

Keywords

Single-photon detection, avalanche photodiodes.

Citation

Restelli, A. , Bienfang, J. and Migdall, A. (2014), Ultra-short gates improve the performance of high-speed gated single photon avalanche diodes, Advanced Photon Counting Techniques VIII, Baltimore, MD, [online], https://doi.org/10.1117/12.2050808 (Accessed December 6, 2023)
Created May 28, 2014, Updated November 10, 2018