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Tunable Noncollinear Antiferromagnetic Resistive Memory through Oxide Superlattice Design



Jason D. Hoffman, Stephen M. Wu, Brian Kirby, Anand Bhattacharya


Antiferromagnets have recently gathered a large amount of attention as a potential replacement for ferromagnets in spintronics devices due to their lack of stray magnetic fields, invisibility to external magnetic probes, and faster magnetization dynamics. Their development into a practical technology, however, has been hampered by the small number of materials where the antiferromagnetic state can be both controlled and read out. We show here, that by relaxing the strict criterion on pure antiferromagnetism, we can design a new class of magnetic materials that overcome these limitations. This is accomplished by stabilizing a non-collinear magnetic phase in LaNiO3/La2/3Sr1/3MnO3 superlattices. The magnetic state can be continuously tuned between antiferromagnetic and ferromagnetic coupling, allowing for ferromagnetic-like coupling, allowing for ferromagnetic-like controllability, while retaining the advantageous properties of antiferromagnetism. We demonstrate a memory device, where the magnetic state of non-collinear antiferromagnetic superlattice is reversibly switched between different orientations using a small magnetic field and read out in real time with anisotropic magnetoresistance measurements.
Physical Review Applied


Hoffman, J. , Wu, S. , Kirby, B. and Bhattacharya, A. (2018), Tunable Noncollinear Antiferromagnetic Resistive Memory through Oxide Superlattice Design, Physical Review Applied, [online], (Accessed April 13, 2024)
Created April 26, 2018, Updated October 12, 2021