Time-domain measurements of afterpulsing in InGaAs/InP SPAD gated with sub-nanosecond pulses
Alessandro Restelli, Joshua C. Bienfang, Alan L. Migdall
We experimentally investigate afterpulsing in an InGaAs single-photon avalanche diode (SPAD) operating in the biasing and sensing regime of periodic-gating techniques. These techniques support single-photon counting at rates in the 100 MHz range with low afterpulse probability and are characterized by sub-nanosecond active gates that limit total avalanche-charge flows to the 100-fC range or less. We achieve comparable gating and sensing performance with a system using non-periodic gates and are able to make traditional double-pulse afterpulse measurements from 4.8 ns to 2 s in this new low-avalanche-current regime. We find that with a 0.50-ns gate duration the per-gate afterpulse probability at 4.8 ns is 0.008, while with a 1.5-ns gate it is almost two orders of magnitude higher. We provide a quantitative connection between afterpulse probability and total avalanche charge, and between the performance observed in traditional gating techniques for InGaAs SPADs and those observed with periodic gating techniques.
, Bienfang, J.
and Migdall, A.
Time-domain measurements of afterpulsing in InGaAs/InP SPAD gated with sub-nanosecond pulses, Journal of Modern Optics, [online], https://doi.org/10.1080/09500340.2012.687463
(Accessed December 5, 2023)