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Thermodynamic Control of Germanium Quantum Dot Growth on Silicon

Published

Author(s)

Richard J. Wagner, E Gulari

Abstract

Strained epitaxial growth of Ge on Si(001) produces self-assembled, nanometer scale islands, or quantum dots. We study this growth by atomistic simulation, computing the energy of island structures to determine when and how islanding occurs. The distribution of island sizes on a surface is determined by the relation of island energy to size. Applying the calculated chemical potential to the Boltzmann-Gibbs distribution, we predict size distributions as functions of coverage and temperature. The peak populations around 80 000 atoms (35 nm wide) compare favorably with experim
Citation
Surface Science
Volume
590

Keywords

atomistic, germanium, quantum dots, self-assembly, silicon, simulation, thermodynamics

Citation

Wagner, R. and Gulari, E. (2005), Thermodynamic Control of Germanium Quantum Dot Growth on Silicon, Surface Science (Accessed May 27, 2024)

Issues

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Created May 1, 2005, Updated February 19, 2017