Wagner, R.
and Gulari, E.
(2005),
Thermodynamic Control of Germanium Quantum Dot Growth on Silicon, Surface Science
(Accessed April 27, 2025)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Thermodynamic Control of Germanium Quantum Dot Growth on Silicon
Published
Author(s)
, E Gulari
Abstract
Strained epitaxial growth of Ge on Si(001) produces self-assembled, nanometer scale islands, or quantum dots. We study this growth by atomistic simulation, computing the energy of island structures to determine when and how islanding occurs. The distribution of island sizes on a surface is determined by the relation of island energy to size. Applying the calculated chemical potential to the Boltzmann-Gibbs distribution, we predict size distributions as functions of coverage and temperature. The peak populations around 80 000 atoms (35 nm wide) compare favorably with experimCitation
Surface Science
Volume
590
Pub Type
Journals
Keywords
atomistic, germanium, quantum dots, self-assembly, silicon, simulation, thermodynamics
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created May 1, 2005, Updated February 19, 2017