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Theory of Photo-induced Resonant Tunneling in Heterojunctions



S Apell, David R. Penn, Mark D. Stiles


The theoretical basis for understanding photo-assisted resonant tunneling is generally taken to be the theory by Tien and Gordon [Phys. Rev. 129, 647 (1963)] in which the effect of a photon field on an energy state is to create sidebands at multiples of the photon energy. An alternative mechanism in which bulk photoabsorption is the photoexcitation mechanism is discussed. The two theories take the same form in the weak- field limit, and an expression is given for the relative size of tunneling currents
Journal of Applied Physics


Apell, S. , Penn, D. and Stiles, M. (1992), Theory of Photo-induced Resonant Tunneling in Heterojunctions, Journal of Applied Physics (Accessed April 18, 2024)
Created December 31, 1991, Updated October 12, 2021