Tensile Creep Behavior of a Gas-Pressure-Sintered Silicon Nitride Containing Silicon Carbide

Published

October 1, 2001

Author(s)

Ralph Krause, Sheldon M. Wiederhorn

Abstract

The tensile creep behavior of a gas-pressure-sintered silicon nitride containing silicon carbide, was carbide was characterized at temperatures between 1375 and 1450 C with applied stresses between 50 and 250 Mpa. Individual specimens were tested at fixed temperatures and applied loads. Each specimen was pin-loaded within the hot zone of a split-tube furnace through silicon carbide rods connected outside the furnace to a pneumatic cylinder. The gauge length was measured by laser extensometry, using gauge markers attached to the specimen. Secondary creep rates ranged from 0.54 to 270 Gs^-1, and the creep tests lasted from 6.7 to 1005 h. Exponential functions of stress and temperature were fitted to represent the secondary creep rate and the creep-lifetime. The material was found to be more creep resistant than two other silicon nitride ceramics that had been characterized earlier by the same method of measurement as viable candidates for high-temperature service.

Citation

Journal of the American Ceramic Society

Volume

84

Issue

No. 10

Pub Type

Journals

Keywords

applied stress, pin-loaded specimen, silicon nitride, temperature, tensile creep

Citation

Krause, R. and Wiederhorn, S. (2001), Tensile Creep Behavior of a Gas-Pressure-Sintered Silicon Nitride Containing Silicon Carbide, Journal of the American Ceramic Society (Accessed December 9, 2023)