Markelz, A.
and Heilweil, E.
(1998),
Temperature Dependent Terahertz Output from Semi-Insulating GaAs Photoconductive Switches, Applied Physics Letters
(Accessed May 9, 2025)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Temperature Dependent Terahertz Output from Semi-Insulating GaAs Photoconductive Switches
Published
Author(s)
,
Abstract
The temperature dependence of the terahertz (THz) output power and spectra from biased photoconductive switches was measured for several antenna gap widths and applied biases. The spectrally integrated THz output had a nonmonotonic temperature dependence in all cases with the values increasing by a factor of 3 from room temperature to 150 K for low biases and 100K at high biases. An abrupt decrease in output power occurs below 90 K, and the spectrum shifts to lower frequencies as the temperature is lowered.Citation
Applied Physics Letters
Volume
72 No. 18
Pub Type
Journals
Keywords
carrier relaxation, mobility, Semi-Insulating GaAs, Terahertz generation, ultrafast infrared
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created May 1, 1998, Updated February 17, 2017