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Temperature Dependent Terahertz Output from Semi-Insulating GaAs Photoconductive Switches



A G. Markelz, Edwin J. Heilweil


The temperature dependence of the terahertz (THz) output power and spectra from biased photoconductive switches was measured for several antenna gap widths and applied biases. The spectrally integrated THz output had a nonmonotonic temperature dependence in all cases with the values increasing by a factor of 3 from room temperature to 150 K for low biases and 100K at high biases. An abrupt decrease in output power occurs below 90 K, and the spectrum shifts to lower frequencies as the temperature is lowered.
Applied Physics Letters
72 No. 18


carrier relaxation, mobility, Semi-Insulating GaAs, Terahertz generation, ultrafast infrared


Markelz, A. and Heilweil, E. (1998), Temperature Dependent Terahertz Output from Semi-Insulating GaAs Photoconductive Switches, Applied Physics Letters (Accessed May 21, 2024)


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Created May 1, 1998, Updated February 17, 2017