Temperature-dependent dielectric relaxation in bismuch zinc niobate thin films.

Published

July 12, 2010

Author(s)

James C. Booth, Nathan D. Orloff, Joel Cagnon, Jiwei Lu, Susanne Stemmer

Abstract

We apply broadband measurement techniques to determine the dielectric permittivity of Bi1.5Zn1.0Nb1.5O7 (BZN) thin films over the frequency range 1 kHz to 40 GHz. At room temperature, the permittivity function shows relaxation at high frequencies (1 GHz), and as the temperature is reduced, the onset of relaxation rapidly moves to lower frequencies, reaching 1kHz at 100K. The complex permittivity function can be modeled by a uniform distribution of relaxation frequencies, with a lower bound that decreases exponentially with decreasing temperature. The observed frequency-dependent dielectric response of BZN thin films is quantitatively similar to the response of bulk ceramics, which suggests that the intrinsic disorder in the BZN material system can be conveniently explored via measurements on thin films

Citation

Applied Physics Letters

Pub Type

Journals

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DOI Link

Keywords

microwave permittivity, dielectric thin film, bizmuth zinc niobate, broadband permittivity

Citation

Booth, J. , Orloff, N. , Cagnon, J. , Lu, J. and Stemmer, S. (2010), Temperature-dependent dielectric relaxation in bismuch zinc niobate thin films., Applied Physics Letters, [online], https://doi.org/10.1063/1.3455897 (Accessed April 26, 2024)