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The Synthesis and Characterization of 1111 Type Diluted Ferromagnetic Semiconductor (La1-xCax)(Zn1-xMnx)AsO

Published

Author(s)

Cui Ding, Shengli Guo, Yao Zhao, Huiyuan Man, Licheng Fu, Yilun Gu, Zhouyang Wang, L. Liu, B. A. Frandsen, S. Cheung, Y. J. Uemura, T. Goko, H. Luetkens, E. Morenzoni, Yang Zhao, F.L. Ning

Abstract

We report the synthesis and characterization of a bulk form diluted magnetic semiconductor, (La1-xCax)(Zn1-yMny)AsO, with a two dimensional crystal structure isostructural to that of the 1111 type Fe-based high-temperature superconductor LaFeAsO and the antiferromagnetic LaMnAsO. With Ca and Mn codoping into LaZnAsO, the ferromagnetic ordering occurs below the Curie temperature TC approximately} 30 K. Taking advantage of the decoupled charge and spin doping, we investigate the influence of carrier concentration on the ferromagnetic ordering state. For a fixed Mn concentration of 10 %, TC increases from 24 K to 30 K with Ca concentration increases from 5 % to 10 %. Further enhancement of Ca concentration suppresses both coercive field and saturation moment. υon spin relaxation measurements confirm the ferromagnetic ordering state, and clearly demonstrate that (La1-xCax)(Zn1-yMny)AsO share a common mechanism for the ferromagnetic exchange interaction with (Ga,Mn)As. Neutron scattering measurements show no structural transition in (La0:90Ca0:10)(Zn0:90Mn0:10)AsO below 300 K.
Citation
Journal of Physics: Condensed Matter
Volume
28

Keywords

semiconductor

Citation

Ding, C. , Guo, S. , Zhao, Y. , Man, H. , Fu, L. , Gu, Y. , Wang, Z. , Liu, L. , Frandsen, B. , Cheung, S. , Uemura, Y. , Goko, T. , Luetkens, H. , Morenzoni, E. , Zhao, Y. and Ning, F. (2015), The Synthesis and Characterization of 1111 Type Diluted Ferromagnetic Semiconductor (La<sub>1-x</sub>Ca<sub>x</sub>)(Zn<sub>1-x</sub>Mn<sub>x</sub>)AsO, Journal of Physics: Condensed Matter, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=919128 (Accessed June 25, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created December 16, 2015, Updated October 12, 2021