Ding, C.
, Gong, X.
, Man, H.
, Zhi, G.
, Guo, S.
, Zhao, Y.
, Wang, H.
, Chen, B.
and Ning, F.
(2014),
The Suppression of Curie Temperature by Sr Doping in Diluted Ferromagnetic Semiconductor (La<sub>1-x</sub>Sr<sub>x</sub>)(Zn<sub>1-y</sub>MnYdy^)AsO, Europhysics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=916000
(Accessed October 10, 2024)
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The Suppression of Curie Temperature by Sr Doping in Diluted Ferromagnetic Semiconductor (La1-xSrx)(Zn1-yMnYdy^)AsO
Published
Author(s)
Cui Ding, Xin Gong, Huiyuan Man, Guoxiang Zhi, Shengli Guo, , Hangdong Wang, Bin Chen, F.L. Ning
Abstract
(La1-xSrx)(Zn1-yMndy^)AsO is a two dimensional diluted ferromagnetic semiconductor that has advantage of decoupled charge and spin doping. The substitution of Sr2+ for La3+ and Mn2+ for Zn2+ into parent semiconductor LaZnAsO introduces hole carriers and spins, respectively. This advantage enables us to investigate the influence of carrier doping on ferromagnetic ordered state through the control of Sr concentration in (La1-xSrx)(Zn0.9Mn0.1)AsO. 10% Sr doping results in a ferromagnetic ordering below Tdc^ 30K. Increasing Sr concentration up to 30 heavily suppresses the Curie temperature and saturation moments. Neutron scattering measurements indicate that no structural transition occurs for (La0.9Sr0.1)(Zn0.9Mn0.1)AsO below 300K.Citation
Europhysics Letters
Volume
107
Pub Type
Journals
Download Paper
Keywords
semiconductors
Citation
Issues
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Created July 6, 2014, Updated October 12, 2021