Structure and Electronic Transport Properties of Si-(B)-C-N Ceramics

Published

October 1, 2001

Author(s)

A M. Hermann, Y T. Wang, P A. Ramakrishnan, Davor Balzar, L A. An, C Haluschka, R Riedel

Abstract

The structure and electronic transport properties of polymer-derived pristine-and boron-doped silicon-carbonitride ceramics have been studied, with particular emphasis on understanding the effect of annealing treatments. Structural analysis using the radial distribution function formalism showed that the local structure is comprised of basic building blocks of Si tetrahedra with B,C, and N at the corners. Comparison of the electrical properties of pristine and boron-doped ceramics shows that boron doping leads to enhanced p-type conductivity, with a small positive thermopower. The postpyrolysis annealing treatments at elevated temperatures have significant effect on the conductivity. The conductivity variation with temperature for these ceramics shows Mott's variable range hopping (VRH) behavior, characteristic of a highly defective semiconductor.

Citation

Journal of the American Ceramic Society

Volume

84

Issue

No. 10

Pub Type

Journals

Keywords

electronic peroperties, radial-distribution-function, semiconductor, short-range order, Si-C-N

Citation

Hermann, A. , Wang, Y. , Ramakrishnan, P. , Balzar, D. , An, L. , Haluschka, C. and Riedel, R. (2001), Structure and Electronic Transport Properties of Si-(B)-C-N Ceramics, Journal of the American Ceramic Society (Accessed November 6, 2025)