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Structure and Electronic Properties of the Orthorhombic MoRuP Superconductor Prepared at High Pressure
Published
Author(s)
Winnie K. Wong-Ng, W Y. Ching, Y N. Xu, James A. Kaduk, I Shirontani, L Swartzendruber
Abstract
The new superconductor, orthorhombic MoRuP (o-MoRuP), was prepared under high pressure, and its structure was refined using the X-ray Rietveld technique. The grayish-black sample of o-MoRuP is a superconductor with Tc=15.5K and having space group Pnma and lattice parameters a = 6.03503(16) , b = 3.85311(8) , and c = 6.94355(17) . The structure of o-MoRuP is characterized by layers (parallel to the ac plane) of Mo, Ru and P atoms. Based on the accurately determined crystal structure, the band structure and the density of states (DOS) of o-MoRuP were calculated by a first-principles density functional method and compared with those of the isostructural superconductor o-ZrRuP (Tc=4K). It is shown that the high Tc in o-MoRuP is directly related to the higher level of the DOS at the Fermi level (EF) and is traced to be predominately from the Mo-4d orbitals. The calculated values of the DOS at EF are 0.46 and 0.33 states/eV-atom for the Mo- and Zr-analogs, respectively. The electronic bonding in these two crystals is analyzed in terms of the Mulliken effective charge and the bond order values. The bonding in o-MoRuP differs from that in o-ZrRuP in that there is a short (2.44 ) Mo-P bond. The X-ray reference pattern of o-MoRuP prepared using a Rietveld decomposition technique has been submitted to the International Center for Diffraction Data (ICDD) to be included in the Powder Diffraction File (PDF).
Citation
Physical Review B (Condensed Matter and Materials Physics)
Wong-Ng, W.
, Ching, W.
, Xu, Y.
, A., J.
, Shirontani, I.
and Swartzendruber, L.
(2003),
Structure and Electronic Properties of the Orthorhombic MoRuP Superconductor Prepared at High Pressure, Physical Review B (Condensed Matter and Materials Physics)
(Accessed October 12, 2025)