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Structural Effects in the Growth of Giant Magnetoresistance (GMR) Spin Valves

Published

Author(s)

M. Menyhard, G. Zsolt, P J. Chen, Cedric J. Powell, Robert McMichael, William F. Egelhoff Jr.

Abstract

Giant magnetoresistance (GMR) spin valves of the Co/Cu/Co type were grown on polycrystalline NiO substrates at three different temperatures. The GMR values and growth temperatures were: 14% for 150 K growth, 10% for 300 K growth, and 0% for 450 K growth. Sputter depth profile analyses indicate that the quality of the layering in the Co/Cu/Co structure was only slightly better for the 150 K sample than for the 300 K sample. For the 450 K sample, however, the Co/Cu/Co structure showed extensive disruption. The similarity of the 150 K and 300 K samples indicates the sensitivity of the GMR to subtle structural differences.
Citation
Applied Surface Science
Volume
180
Issue
No. 3-4

Keywords

annealing, Auger depth profiling, copper cobalt, giant magnetoresistance, GMR, growth, interface morphology, metal-metal magnetic thin-film structure, spin valve

Citation

Menyhard, M. , Zsolt, G. , Chen, P. , Powell, C. , McMichael, R. and Egelhoff Jr., W. (2001), Structural Effects in the Growth of Giant Magnetoresistance (GMR) Spin Valves, Applied Surface Science (Accessed April 20, 2024)
Created July 31, 2001, Updated October 12, 2021