Structural Effects in the Growth of Giant Magnetoresistance (GMR) Spin Valves

Published

August 1, 2001

Author(s)

M. Menyhard, G. Zsolt, P J. Chen, Cedric J. Powell, Robert McMichael, William F. Egelhoff Jr.

Abstract

Giant magnetoresistance (GMR) spin valves of the Co/Cu/Co type were grown on polycrystalline NiO substrates at three different temperatures. The GMR values and growth temperatures were: 14% for 150 K growth, 10% for 300 K growth, and 0% for 450 K growth. Sputter depth profile analyses indicate that the quality of the layering in the Co/Cu/Co structure was only slightly better for the 150 K sample than for the 300 K sample. For the 450 K sample, however, the Co/Cu/Co structure showed extensive disruption. The similarity of the 150 K and 300 K samples indicates the sensitivity of the GMR to subtle structural differences.

Citation

Applied Surface Science

Volume

180

Issue

No. 3-4

Pub Type

Journals

Keywords

annealing, Auger depth profiling, copper cobalt, giant magnetoresistance, GMR, growth, interface morphology, metal-metal magnetic thin-film structure, spin valve

Citation

Menyhard, M. , Zsolt, G. , Chen, P. , Powell, C. , McMichael, R. and Egelhoff Jr., W. (2001), Structural Effects in the Growth of Giant Magnetoresistance (GMR) Spin Valves, Applied Surface Science (Accessed May 13, 2024)