Ojo, O.
, Wong-Ng, W.
, Chang, T.
, Chen, Y.
and Nolas, G.
(2022),
Structural and electronic properties of Cu3InSe4, Crystals, [online], https://doi.org/10.3390/cryst12091310, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=934721
(Accessed April 19, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Structural and electronic properties of Cu3InSe4
Published
Author(s)
Oluwagbemiga Ojo, , Teiyan Chang, Yu-Sheng Chen, George S. Nolas
Abstract
Single crystals of the previously unascertained ternary chalcogenide Cu3InSe4 were obtained by induction melting, allowing for a complete investigation of the crystal structure by employing high-resolution single-crystal synchrotron X-ray diffraction. Cu3InSe4 crystallizes in a cubic structure, space group P4 ̅3m, with lattice constant 5.7504(2) Å and a density of 5.425 g/cm3. There are three unique crystallographic sites in the unit cell, with each cation bonded to four Se atoms in a tetrahedral geometry. Electron localization function calculations were employed in investigating the bonding character and first-principle electronic structure calculations are also presented. The results are discussed in light of the ongoing interest in exploring the structural and electronic properties of new chalcogenide materials.Citation
Crystals
Volume
12
Pub Type
Journals
Download Paper
Keywords
Cu3InSe4 , crystal structure, electronic structure, chalcogenide, electron localization function calculations
Citation
Created September 11, 2022, Updated November 29, 2022