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Strain and Spin-Orbit Effects in Self-Assembled Quantum Dots

Published

Author(s)

M Zielinski, W Jaskolski, Javier Aizpurua, Garnett W. Bryant

Abstract

The effects of strain and spin-orbit interaction in self-assembled lens-shaped InAs/GaAs quantum dots are investigated. Calculations are performed with empirical tight-binding theory supplemented by the valence force field method to account for effects of strain caused by lattice mismatch at the InAs-GaAs interface. It is shown that both effects influence strongly the electron and hole energy structure: splitting of the energy levels, the number of bound states, density distributions and transition rates. We show that piezoelectric effects are almost negligible in quantum dots of the size investigated.
Citation
ACTA Physica Polonica A

Keywords

electronic properties, GaAs, InAs, quantum dots, spin-orbit effects, strain, tight binding theory

Citation

Zielinski, M. , Jaskolski, W. , Aizpurua, J. and Bryant, G. (2021), Strain and Spin-Orbit Effects in Self-Assembled Quantum Dots, ACTA Physica Polonica A (Accessed May 21, 2022)
Created October 12, 2021