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STM Studies of Halide Adsorption on CU(100), CU(110) and CU(111)

Published

Author(s)

Thomas P. Moffat

Abstract

The potential dependent adsorption of chloride and bromide on the three low index copper surfaces has been examined with voltammetry and STM. At saturation coverage, ordered halide adlayers are observed on all three surfaces; (square root 2 x square root 2) R45o(degrees) Cl/Cu (100), (square root 2 x square root 2) R45o(degrees) br/Cu(100), (3x2) Br/CU(110), c(p x square root 3R30o (degrees)) Cl/Cu(111). The adlayers lead to step faceting and in certain cases step bunching. The adlayer floats on the surface during metal deposition acting as template guiding step flow. At negative potentials various phase transitions occur coincident with the partial desorption of halide, which lead to significant changes in the mesocopic surface structure. Initial experiments indicate that modulation of the potential in the range of the order-disorder transition has a significant impact on the morphological evolution during copper deposition. The significance of halide adsorption on copper additive plating is briefly discussed.
Citation
Electrochemical Society Transactions

Keywords

additive electroplating, copper single crystal, halide adsorption, homoepitaxial, STM, surfactants

Citation

Moffat, T. (2008), STM Studies of Halide Adsorption on CU(100), CU(110) and CU(111), Electrochemical Society Transactions (Accessed June 18, 2024)

Issues

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Created October 16, 2008