State-Space Modeling of Slow-Memory Effects Based on Multisine Vector Measurements

Published

December 4, 2003

Author(s)

Dominique Schreurs, Kate Remley, M. Myslinski, R. Vandermissen

Abstract

Non-linear microwave devices and circuits often exhibit slow-memory effects. When subjected to two-tone, or more general multisine excitations, the characteristics of these devices and circuits depend on the offset frequency between the tones. Since modulated excitations are an integral part of telecommunication systems, models aimed for circuit and system design should be able to accurately represent slow-memory behaviour. In this work, we develop a modelling procedure based on the state-space modelling approach to accurately incorporate these slow-memory effects. The technique is experimentally demonstrated on a High Electron Mobility Transistor (HEMT).

Conference Dates

December 2-5, 2003

Conference Location

Boulder, CO, USA

Conference Title

ARFTG Microwave Measurement Conference

Pub Type

Conferences

Download Paper

https://doi.org/10.1109/ARFTGF.2003.1459757

Local Download

Keywords

State-Space Model, Memory Effect, Time-Domain Modeling, Artifical Neural Network, High Electron Mobility Transistor, Multisine, Two-Tone Intermodulation, Large-Signal Network Analyzer

Citation

Schreurs, D. , Remley, K. , Myslinski, M. and Vandermissen, R. (2003), State-Space Modeling of Slow-Memory Effects Based on Multisine Vector Measurements, ARFTG Microwave Measurement Conference, Boulder, CO, USA, [online], https://doi.org/10.1109/ARFTGF.2003.1459757, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=31521 (Accessed October 8, 2025)