Stacked Niobium-MoSi2-Niobium Josephson Junctions for AC Voltage Standards

Published

June 1, 2005

Author(s)

Paul Dresselhaus, Yonuk Chong, Samuel Benz

Abstract

Superconductor-normal metal-superconductor (SNS) Josephson junctions have proven to be a critical technology for voltage standards. NIST has used SNS junctions for both programmable DC and AC voltage standards. Previous devices have primarily used PdAu as a normal metal barrier material. In this paper we present results of circuits having MoSi₂ barriers. The main advantages of MoSi₂ are that it can be etched in a low energy plasma, which enables the fabrication of vertically stacked junctions, and the reproducibility of its barriers produces consistent electrical properties. Stacking enables the junctions to be packed more densely, thus increasing design flexibility and margins for the microwave circuits. In this work, results are presented from two and three junction stacks for application to ac Josephson voltage standards.

Citation

IEEE Transactions on Applied Superconductivity

Volume

15

Issue

2

Pub Type

Journals

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Keywords

Digital-analog conversion, Josephson arrays, Superconducting devices, Superconducting films, Thin film devices

Citation

Dresselhaus, P. , Chong, Y. and Benz, S. (2005), Stacked Niobium-MoSi₂-Niobium Josephson Junctions for AC Voltage Standards, IEEE Transactions on Applied Superconductivity, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=31824 (Accessed April 23, 2024)