Stable Field Emission from Nanoporous Silicon Carbide

Published: February 15, 2013


Myung Gyu Kang, Henri J. Lezec, Fred Sharifi


A new method for fabrication of high current density field emitters based on nanoporous silicon carbide is presented. The emitters are monolithic structures which do not require high temperature gas phase synthesis and the process is compatible with standard microfabrication techniques. Stable emission in excess of 6 A/cm2 at 7.5 V/m is demonstrated. The technique may potentially enable non-thermionic electron sources for applications ranging from microwave electronics to displays.
Citation: Nanotechnology
Volume: 24
Issue: 6
Pub Type: Journals


Field Emission, Nanoporous Silicon Carbide, Electrochemical Etching, Focused Ion Beam
Created February 15, 2013, Updated November 10, 2018