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Small-Angle Neutron Scattering Measurements of Nanoscale Lithographic Features

Published

Author(s)

Wen-Li Wu, Eric K. Lin, Q Lin, M Angelopoulos

Abstract

The continuing decrease in feature sizes in the semiconductor and other nanofabriation industries has placed increasingly stringent demands on current microscopy-based techniques to precisely measure both the critical dimensions and the quality (i.e. line-edge roughness) of these structures. Small-angle neutron scattering (SANS) experiments provide a quick, non-destructive, and quantitative measurement of the three-dimensional shape and quality of lithographically prepared structures as fabricated on a silicon substrate. We demonstrate the application of SANS for the characterization of nanoscale structures using periodic 150 nm parallel lines prepared using standard 248 nm photolithographic processes.
Citation
Journal of Applied Physics
Volume
88
Issue
No. 12

Keywords

critical dimension, line-edge roughness, lithography, nanofabrication, small angle neutron scattering

Citation

Wu, W. , Lin, E. , Lin, Q. and Angelopoulos, M. (2000), Small-Angle Neutron Scattering Measurements of Nanoscale Lithographic Features, Journal of Applied Physics, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=851751 (Accessed May 18, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created December 1, 2000, Updated February 17, 2017