Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Simulation of the Cell to Plane Front Transition During Directional Solidification at High Velocity

Published

Author(s)

William J. Boettinger, James A. Warren

Abstract

Using the alloy phase-field method with a frozen temperature approximation, interface morphology and solute segregation patterns during directional solidification are examined near the high velocity (absolute stability) condition for planar growth. The dynamics of the breakdown of initially planar interfaces into cellular structures are shown. At sufficiently high solidification speed, a planar interface is reestablished after breakdown during the initial transient. The cell spacings, depths, tip temperatures and concentration patterns are determined as a function of solidification velocity. The presence of solute trapping is manifest in the variation of the degree of solute partitioning across the interfacial region with interface speed.
Citation
Journal of Crystal Growth
Volume
200
Issue
3-4

Keywords

cellular growth, chaos, directional solidification, high solidification speed

Citation

Boettinger, W. and Warren, J. (1999), Simulation of the Cell to Plane Front Transition During Directional Solidification at High Velocity, Journal of Crystal Growth (Accessed May 23, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created April 11, 1999, Updated February 17, 2017