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Self-powered p-NiO/n-ZnO heterojunction ultraviolet photodetectors fabricated on plastic substrates



Ratan K. Debnath, MD R. Hasan, Ting Xie, Sara C. Barron, Guannan Liu, Nhan V. Nguyen, Abhishek Motayed, M V. Rao


A self-powered ultraviolet (UV) photodetector (PD) based on p-NiO and n-ZnO was fabricated using low-temperature sputtering technique on indium doped tin oxide (ITO) coated plastic polyethylene terephthalate (PET) substrates. The fabricated devices showed good photovoltaic properties with an open-circuit voltage of ~270 mV, a short-circuit current of ~85 nA and a fill factor of ~41% under the illumination wavelength of 370 nm. The p-n heterojunction also showed excellent photoresponse and quantum efficiency under UV illumination. With an applied reverse bias of 1.2V, the maximum external quantum efficiency, responsivity and detectivity reached 63%, 0.19 A/W and 3.8 x 1012 cm.vHz/W(or Jones), respectively. The engineered ultrathin Ti/Au top metal contacts and UV transparent PET/ITO substrates allowed the PDs to be illuminated through either front or back side. Morphology, structural, chemical and optical properties of sputtered NiO and ZnO films were also investigated.
APL Materials


Debnath, R. , Hasan, M. , Xie, T. , Barron, S. , Liu, G. , Nguyen, N. , Motayed, A. and Rao, M. (2015), Self-powered p-NiO/n-ZnO heterojunction ultraviolet photodetectors fabricated on plastic substrates, APL Materials (Accessed April 19, 2024)
Created October 1, 2015, Updated February 19, 2017