Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Self-powered p-NiO/n-ZnO heterojunction ultraviolet photodetectors fabricated on plastic substrates

Published

Author(s)

Ratan K. Debnath, MD R. Hasan, Ting Xie, Sara C. Barron, Guannan Liu, Nhan V. Nguyen, Abhishek Motayed, M V. Rao

Abstract

A self-powered ultraviolet (UV) photodetector (PD) based on p-NiO and n-ZnO was fabricated using low-temperature sputtering technique on indium doped tin oxide (ITO) coated plastic polyethylene terephthalate (PET) substrates. The fabricated devices showed good photovoltaic properties with an open-circuit voltage of ~270 mV, a short-circuit current of ~85 nA and a fill factor of ~41% under the illumination wavelength of 370 nm. The p-n heterojunction also showed excellent photoresponse and quantum efficiency under UV illumination. With an applied reverse bias of 1.2V, the maximum external quantum efficiency, responsivity and detectivity reached 63%, 0.19 A/W and 3.8 x 1012 cm.vHz/W(or Jones), respectively. The engineered ultrathin Ti/Au top metal contacts and UV transparent PET/ITO substrates allowed the PDs to be illuminated through either front or back side. Morphology, structural, chemical and optical properties of sputtered NiO and ZnO films were also investigated.
Citation
APL Materials

Citation

Debnath, R. , Hasan, M. , Xie, T. , Barron, S. , Liu, G. , Nguyen, N. , Motayed, A. and Rao, M. (2015), Self-powered p-NiO/n-ZnO heterojunction ultraviolet photodetectors fabricated on plastic substrates, APL Materials (Accessed April 19, 2024)
Created October 1, 2015, Updated February 19, 2017