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Second Harmonic Generation From the Si/SiO2 Interface

Published

Author(s)

S T. Cundiff, T M. Fortier

Abstract

Optical second harmonic generation Is very sensitive to surfaces or interfaces if the bulk material is inversion symmetric. We present the resultsof second harmonic studies of the interface between silicon and silicon dioxide. Previous results have shown that the technique is sensitive to roughness at this interface. To develop a further understanding of why roughness influences second harmonic generation, we investigate the dependence of the second harmonic on the photon energy of the incident pulses. Measurements are made a series of samples, with varying vicinal angles, in order to determine what role miscut and step edges play.
Citation
International Society for Optical Engineering

Keywords

second harmonic generation, silicon, ultrafast lasers

Citation

Cundiff, S. and Fortier, T. (2008), Second Harmonic Generation From the Si/SiO<sub>2</sub> Interface, International Society for Optical Engineering (Accessed April 13, 2024)
Created October 16, 2008