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Search Publications by: Yu Xin Wen ()

Displaying 1 - 2 of 2

Impact of near interface defects on NO annealed SiC MOSFET mobility

July 2, 2025

Author(s)

Yu Xin Wen, Bing-Yue Tsui, Kin Cheung

A series of recent studies asserted that near-interface-traps (NITs) are introduced by the post-oxidation NO annealing process and these NITs are the cause for the low mobility of NO annealed SiC MOSFETs. We use fast Id-Vg measurement to directly probe

On the response time constant of interface defects

January 21, 2025

Author(s)

Kin Cheung, Yu Xin Wen, Bing-Yue Tsui

Interface defect response time is a key parameter in some common electrical measurements of MOS devices, most notably the hi-lo CV measurement as well as the conductance measurement. A long established believe is that interface defects at energies close to

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