Dagata, J.
and Kopanski, J.
(1995),
Scanned Probe Techniques for the Electrical Characterization of Semiconductor Devices, Solid State Technology
(Accessed December 7, 2023)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Scanned Probe Techniques for the Electrical Characterization of Semiconductor Devices
Published
Author(s)
,
Abstract
The spatial resolution, sensitivity, and accuracy required for electrical characterization of device structures in the semiconductor industry suggest that scanned probe microscopy (SPM) tools may offer an alternative to existing measurement techniques. Due to their inherent two-dimensional imaging capabilities, high spatial resolution, and the nondestructive nature of the measurement, the evolution of SPM-based characterization tools from lab to fab is now underway. This article examines the current standard of performance for electrical measurements of semiconductor devices and the prospects for the application of SPM as a next generation tool for dopant profiling and defect inspection of device structures.Citation
Solid State Technology
Volume
38(7)
Pub Type
Journals
Citation
Created June 30, 1995, Updated October 12, 2021