Scalable arrays of doped silicon RF Paul traps

Published

October 26, 2009

Author(s)

Joseph W. Britton, Dietrich G. Leibfried, James A. Beall, Brad R. Blakestad, Janus H. Wesenberg, David J. Wineland

Abstract

We report techniques for the fabrication of multi-zone linear RF Paul traps which exploit the machinability and electrical conductivity of bulk doped silicon. The approach was verified by trapping and Doppler cooling 24Mg+ ions in two trap geometries: a single-zone 2-layer trap and a multi-zone surface-electrode trap. From the measured ion motional heating rate we determine an electric field spectral density at the ion of approximately 1 × 10^-10 (V /m)² Hz⁻¹ at ωz /2π {math equals} 1.125 MHz when the ion lies 40 υm above the electrode surface. One application of these devices is controlled manipulation of atomic ion qubits, the basis of one form of quantum information processing.

Citation

Applied Physics Letters

Volume

95

Pub Type

Journals

Download Paper

Local Download

Keywords

atomic physics, ion trapping, laser cooling, microfabrication, quantum computation, quantum information, quantum state engineering

Citation

Britton, J. , Leibfried, D. , Beall, J. , Blakestad, B. , Wesenberg, J. and Wineland, D. (2009), Scalable arrays of doped silicon RF Paul traps, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=902543 (Accessed December 13, 2024)