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Room-temperature Single-electron Memory Made by Pulse-mode Atomic Force Microscopy Nano-oxidation Process on Atomically Flat Alpha-alumina Substrate

Published

Author(s)

K Matsumoto, Y Gotoh, T Maeda, John A. Dagata, J S. Harris

Abstract

A single-electron memory was fabricated using the improved pulse-mode atomic force microscopy nano oxidation process which oxidized the surface of the thin titanium (Ti) metal on the atomically flat -alumina (-Al2O3) substrate and formed the narrow oxidized titanium (TiOx) line that works as a tunnel junction for the device. This single-electron memory consists of the multitunnel junction and a memory capacitance. The single-electron transistor, which works as an electrometer, was connected to the memory node of the single-electron memory to detect the potential change of the memory node by the injection of the individual electrons. The fabricated single-electron memory showed the hysteresis loop even at room temperature by the return trip of the memory bias when starting from 0 to 10 V and again coming back to 0 V. About 25 electrons were stored at the memory node.
Citation
Applied Physics Letters
Volume
76(2)

Citation

Matsumoto, K. , Gotoh, Y. , Maeda, T. , Dagata, J. and Harris, J. (2000), Room-temperature Single-electron Memory Made by Pulse-mode Atomic Force Microscopy Nano-oxidation Process on Atomically Flat Alpha-alumina Substrate, Applied Physics Letters (Accessed May 18, 2024)

Issues

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Created January 9, 2000, Updated October 12, 2021