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Resonant X-ray Emission of Hexagonal Boron Nitride

Published

Author(s)

John T. Vinson, Terrence J Jach, Matthias Mueller, Rainer Unterumsberger, Burkhard Beckhoff

Abstract

The electronic structure of hexagonal boron nitride ({\it h}-BN) is explored using measurements of x-ray absorption and resonant inelastic x-ray scattering (RIXS) at the nitrogen K edge (1{\it s}) in tandem with calculations of the same using many-body perturbation theory within the {\it GW} and Bethe-Salpeter equation (BSE) approximations. Our calculations include the effects of lattice disorder from phonons activated thermally and from zero point energy and highlight the influence of disorder on near-edge x-ray spectra.
Citation
Physical Review B
Volume
96

Citation

Vinson, J. , , T. , Mueller, M. , Unterumsberger, R. and Beckhoff, B. (2017), Resonant X-ray Emission of Hexagonal Boron Nitride, Physical Review B, [online], https://doi.org/10.1103/PhysRevB.96.205116 (Accessed April 26, 2024)
Created November 9, 2017, Updated June 2, 2021