U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

PUBLICATIONS

Refined Calculations of Effective Attenuation Lengths for SiO2 Film Thicknesses by X-Ray Photoelectron Spectroscopy

Published

Author(s)

Cedric J. Powell, W S. Werner, W Smekal

Abstract

We report electron effective attenuation lengths (EALs) for SiO2 films on Si that were obtained from Monte Carlo simulations of substrate Si 2p3/2 photoelectron transport for X-ray photoelectron spectroscopy (XPS) with Al and Mg Ka X-rays and SiO2 films of varying thickness. These EALs show a stronger dependence on SiO2 thickness than previous values found from an approximate algorithm. Since recent XPS data for SiO2 can be analyzed satisfactorily with thickness-independent EALs, our results indicate that intrinsic excitations and/or variations of inelastic-scattering probabilities near surfaces and interfaces appear to be significant in quantitative XPS.
Citation
Applied Physics Letters
Pub Type
Journals

Keywords

attenuation lengths, electron attenuation lengths, film thickness, silicon dioxide, X-ray Photoelectron Spectroscopy

Citation

Powell, C. , Werner, W. and Smekal, W. (2008), Refined Calculations of Effective Attenuation Lengths for SiO<sub>2</sub> Film Thicknesses by X-Ray Photoelectron Spectroscopy, Applied Physics Letters (Accessed October 7, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created October 16, 2008